FDC655BN
Manufacturer:
On Semiconductor
Mfr.Part #:
FDC655BN
Datasheet:
Description:
MOSFETs TSOT-23-6 SMD/SMT N-Channel number of channels:1 1.6 W 30 V Continuous Drain Current (ID):6.3 A 13 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 30 V |
| Length | 3 mm |
| Width | 1.7 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 6 |
| Resistance | 25 mΩ |
| Height | 1 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Weight | 0.036 g |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 6.3 A |
| Lifecycle Status | Production (Last Updated: 5 months ago) |
| Max Power Dissipation | 800 mW |
| Power Dissipation | 1.6 W |
| Threshold Voltage | 1.9 V |
| Number of Channels | 1 |
| Input capacitance | 570 pF |
| Continuous Drain Current (ID) | 6.3 A |
| Rds On Max | 25 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Turn-On Delay Time | 6 ns |
| Turn-Off Delay Time | 15 ns |
| Element Configuration | Single |
| Rise Time | 4 ns |
| Gate Charge | 13 nC |
| Drain to Source Resistance | 21 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | 1.9 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 30 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 5 months ago) |
| Gate to Source Threshold Voltage | 1 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 1619
Distributors
pcbx
pcbxUnit Price$0.22675
Ext.Price$0.22675
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.22675 | $0.22675 |
| 10 | $0.21114 | $2.11140 |
| 50 | $0.19661 | $9.83050 |
| 100 | $0.18243 | $18.24300 |
| 500 | $0.16927 | $84.63500 |
| 1000 | $0.16644 | $166.44000 |
| 3000 | $0.16366 | $490.98000 |
| 5000 | $0.15925 | $796.25000 |